Interconnect and contact for nanoelectronics: Metallic TaSi_2 nanowires

摘要

TaSi_2 nanowires have been synthesized on Si substrate by annealing FeSi_2 thin film and NiSi_2 films at 950 ℃ in an ambient containing Ta vapor whose length would be grown up to 13 μm. The metallic TaSi_2 nanowires exhibit excellent electrical properties with remarkable high failure current density of 3×10~8 A cm~(-2). In addition, the growth mechanism is addressed in detail, The TaSi_2 nanowires are formed in three steps: segregation of Si atoms from the FeSi_2 thin film and NiSi_2 films underlayer to form Si base, growth of TaSi_2 nanodots on Si base, and elongation of TaSi_2 nanowire along the growth direction. This simple approach promises future applications in nanoelectronics and nano-optoelectronics.