Chemical stability of CaCu_3Ti_4O_(12) thin films grown by MOCVD on different substrates

摘要

Calcium copper titanate, CaCu_3Ti_4O_(12) (CCTO), thin films have been fabricated by Metal Organic Chemical Vapor Deposition on silicon substrates buffered with two different low-k interlayers, namely SiO_2 and Si_3N_4. Depositions have been carried out from a molten mixture consisting of the Ca (hfa)_2·tetraglyme, Ti(tmhd)_2(O-iPr)_2, and Cu(tmhd)_2 [Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme = 2,5,8,11,14-pentaoxapentadecane; Htmhd = 2,2,6,6-tetramethyl-3,5-heptandione; O-iPr = iso-propoxide] precursors. The chemical stability of CCTO films on both the SiO_2 and Si_3N_4 low-k layers has been investigated by transmission electron microscopy in the perspective of their implementation in capacitor devices.