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Fabrication of nano-pillar chips by a plasma etching technique for fast DNA separation

机译:通过等离子刻蚀技术制造纳米柱状芯片以快速分离DNA

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The fabrication of quartz nano-pillars was investigated using dry etching with a Ni mask. The mask diameter increased during etching due to re-sputtering of the Pt/Cr seed layer. However, once the seed layer had been eroded the enlarged mask diameter did not increase any further. Hence, the use of the mask enabled the fabrication of nano-pillars with a high aspect ratio. In situ FTIR-ATR observation of HF quartz plate pressure bonding developed a new bonding technique involving the use of H_2SiF6. The nano-pillar chips allowed then to size-separate DNA of 10 kbp and 38 kbp within 20 s.
机译:使用具有Ni掩模的干法蚀刻研究了石英纳米柱的制造。由于Pt / Cr种子层的重新溅射,在蚀刻过程中掩模的直径增加了。然而,一旦种子层被侵蚀,扩大的掩模直径就不会进一步增加。因此,使用掩模使得能够制造具有高纵横比的纳米柱。 HF石英板的压力结合的原位FTIR-ATR观测开发了一种涉及使用H_2SiF6的新结合技术。然后,纳米柱状芯片可以在20 s内对10 kbp和38 kbp的DNA进行大小分离。

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