Influences of atomic hydrogen on porous low-k dielectric for 45-nm node

摘要

Atomic hydrogen generated by a heated tungsten catalyzer has been investigated in terms of the damage-less ash and restoration of damaged low-k dielectric. No difference of damaged thickness of low-k dielectric between before and after the ash by HF dip using patterned porous methyl silsesquioxane (MSQ) film was found. Moreover atomic hydrogen exposure slightly reduced capacitance of the micro-structured capacitor with the Cu wire and the CVD porous low-k dielectric.