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Characterizing And Comparing The Cathodoluminesence And Field Emission Properties Of Sb Doped Sno_2 And Sno_2 Nanowires

机译:Sb掺杂Sno_2和Sno_2纳米线的阴极发光和场发射特性的表征与比较。

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Sb doped SnO_2 (SnO_2:Sb) nanowires (NWs) were synthesized by thermal evaporation at 900 ℃. Thin-film X-ray diffraction showed that as-synthesized nanowires were a single-phase rutile structure. Field emission scanning microscopy revealed that the nanowires had diameters of 80-120 nm and lengths of up to several hundreds microns long. High-resolution transmission electron microscopy (HRTEM), electron energy-loss spectroscopy (EELS), and an energy-filtering system were employed to map two-dimensional element concentration. HRTEM images further confirmed that the crystallinity of the nanowires was accompanied by crystal defects with lattice distortion as Sb was incorporated into a SnO_2 nanowire. Cathodoluminescence (CL) spectrophotometer analysis has revealed blue and green emission peaks in both SnO_2:Sb and pure SnO_2 nanowires. The electron field emission values of the SnO_2:Sb and SnO_2 nanowires in the turn-on fields were estimated as ~4.9 and 6.5 V/μm, respectively; the current density was 1 μA/cm~2.
机译:通过900℃的热蒸发合成了掺锑的SnO_2(SnO_2:Sb)纳米线。薄膜X射线衍射表明,合成后的纳米线是单相金红石结构。场发射扫描显微镜显示,纳米线的直径为80-120 nm,长度可达几百微米。使用高分辨率透射电子显微镜(HRTEM),电子能量损失谱(EELS)和能量过滤系统绘制二维元素浓度图。 HRTEM图像进一步证实,当将Sb掺入SnO_2纳米线中时,纳米线的结晶性伴随有晶格畸变的晶体缺陷。阴极发光(CL)分光光度计分析已显示SnO_2:Sb和纯SnO_2纳米线中的蓝色和绿色发射峰。 SnO_2:Sb和SnO_2纳米线在开启场中的电子场发射值分别估计为4.9 V /μm和6.5 V /μm。电流密度为1μA/ cm〜2。

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