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Experimental Evaluation Of Mgo Sputtering Yields By Monochromatic Ne, Kr, Or Xe Ion Beams

机译:Ne,Kr或Xe离子束对Mgo溅射产量的实验评估

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摘要

Sputtering yields of microcrystalline magnesium oxide (MgO) by Ne, Kr, or Xe ion beams of normal incidence have been obtained experimentally as functions of injection energy in the range of 25-375 eV. MgO is widely used for barrier coating of plasma display panel (PDP) cells and its resistance against physical sputtering by various ion species, especially in the range of low injection energies, is valuable information for the development of highly efficient, long-lifetime PDP cells. It has been found that MgO sputtering yields depend very weakly on the mass of incident species among Ne, Ar, Kr, and Xe ions in this energy range. The results indicate that a standard collision cascade model with binary collisions may not be used to account for physical sputtering mechanisms of MgO in the energy range examined here.
机译:已经通过实验获得了在25-375 eV范围内注入能量的函数,通过正入射Ne,Kr或Xe离子束对微晶氧化镁(MgO)的溅射产率。 MgO广泛用于等离子显示面板(PDP)电池的阻隔涂层,其抗各种离子种类引起的物理溅射的能力,尤其是在低注入能量范围内,对于开发高效,长寿命的PDP电池是有价值的信息。已经发现,在该能量范围内,MgO溅射产率非常弱地依赖于Ne,Ar,Kr和Xe离子之间的入射物种的质量。结果表明,具有二元碰撞的标准碰撞级联模型可能无法用于解释此处检查的能量范围内MgO的物理溅射机理。

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