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Effect Of Growth Temperature On Field Emission From An Array Of Carbon Nanotubes Nested Into A Silicon Nanoporous Pillar Array

机译:生长温度对嵌套在硅纳米多孔柱阵列中的碳纳米管阵列的场发射的影响

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摘要

Large scale nest arrays of multi-walled carbon nanotubes (NA-MWCNT) were grown on silicon nanoporous pillar arrays (Si-NPA) by thermal chemical vapour deposition at 700,800, and 900 ℃ respectively for 15 min. The corresponding field emission properties were also studied. It was found that growth temperature had a significant effect on the performance of CNTs, the field emission efficiency of NA-MWCNT/Si-NPA synthesized at 900 ℃ was higher than that of the other two types of samples. By hiring scanning electron microscope observing and high resolution transmission electron microscopy analysis, the reason was attributed to numerous nanoparticles appearance on the surface of the CNT and highly folding graphite sheets formation on both sides of the nanotubes fabricated at 900 ℃. Both could enhance emission properties by lowering the effective work function and increasing the field enhancement factor as well as the number of the emission sites.
机译:通过分别在700,800和900℃下热化学气相沉积15分钟,在硅纳米多孔柱阵列(Si-NPA)上生长大规模的多壁碳纳米管嵌套阵列(NA-MWCNT)。还研究了相应的场发射特性。研究发现,生长温度对碳纳米管的性能有显着影响,在900℃下合成的NA-MWCNT / Si-NPA的场发射效率高于其他两种样品。通过雇用扫描电子显微镜观察和高分辨率透射电子显微镜分析,其原因归因于在CNT表面上出现了许多纳米颗粒,并且在900℃下制造的纳米管的两侧都形成了高度折叠的石墨片。两者都可以通过降低有效功函数和增加场增强因子以及发射点的数量来增强发射特性。

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