Chemical And Optical Profiling Of Ultra Thin High-k Dielectrics On Silicon

摘要

The thickness of HfO_2 and hafnium silicate Hf_xSi_(1-x)O_y thin films with a range of compositions are investigated using three complementary analytical techniques. We compare results obtained from Medium Energy Ion Scattering spectroscopy, spectroellipsometry and high-resolution Transmission Electron Microscopy. Our results demonstrate that the thickness of the silicate layers decreases with the Hf content.