Local Strain In Si/si_0.6ge_(0.4)/si(100) Heterostructures By Stripe-shape Patterning

摘要

In Si/Si_(0.6)Ge_(0.4)/Si(100) heterostructure patterned into stripe shape, local strain in the capping Si and Si_(0.6)Ge_(0.4) layers was investigated. From the strain amount evaluation by Raman scattering spectroscopy using visible and ultraviolet light, relationship between the strain relaxation amount in the strained Si_(0.6)Ge_(0.4) layer and tensile strain amount in the capping Si layer was clarified. The Raman shift change in the 5 nm-thick capping Si layer was in excellent agreement with the expected value with assumption of perfect in-plane lattice matching between the Si_(0.6)Ge_(0.4) and capping Si layers. In the case of the thicker capping Si layer, the Raman shift change tends to be smaller than that for the 5 nm-thick capping Si layer.