Reliability Degradation Of Thin Hfo_2/sio_2 Gate Stacks By Remote Rf Hydrogen And Deuterium Plasma Treatment

摘要

Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/ SiO_2/HfO_2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress.