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首页> 外文期刊>Thin Solid Films >Investigation of the ability of a silica 'seed' layer to improve the thermal and aqueous immersion stability of alkylsilane monolayers on silicon oxide surfaces
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Investigation of the ability of a silica 'seed' layer to improve the thermal and aqueous immersion stability of alkylsilane monolayers on silicon oxide surfaces

机译:二氧化硅“种子”层改善氧化硅表面上烷基硅烷单层的热和水浸稳定性的能力的研究

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摘要

Previously, a "seed" layer has been demonstrated to improve the thermal and immersion stability of organosilane films deposited on titanium nitride and aluminum substrates through the creation of a highly hydroxylated surface favorable for organosilane surface reaction. In order to determine if a similar silica seed layer can improve the stability of similar monolayers deposited on surfaces that are favorable for organosilane surface modification in their native state, the thermal and aqueous immersion stability of various alkylsilane molecular films on clean silicon oxide surfaces and on silicon oxide surfaces treated with the silica seed layer have been investigated. Contact angle, ellipsometry and atomic force microscopy are employed to monitor samples treated with various alkylsilane monolayers as they are subjected to elevated temperatures and aqueous immersion. Nearly identical trends in contact angle and ellipsometric data demonstrate that the silica seed layer does not improve the thermal and aqueous immersion stability of alkylsilane films on silicon oxide surfaces. Furthermore, this study demonstrates the importance of collecting both contact angle and ellipsometric data during immersion experiments, as reliance on contact angle data alone may lead to faulty conclusions regarding film stability.
机译:以前,已经证明“种子”层通过产生有利于有机硅烷表面反应的高度羟基化的表面来改善沉积在氮化钛和铝基板上的有机硅烷膜的热稳定性和浸渍稳定性。为了确定相似的二氧化硅种子层是否可以提高沉积在表面上的相似单层的稳定性,这些表面在其原始状态下有利于有机硅烷的表面改性,因此,各种烷基硅烷分子膜在干净的氧化硅表面和表面上的热和水浸稳定性已经研究了用二氧化硅种子层处理过的氧化硅表面。接触角,椭圆光度法和原子力显微镜用于监测样品经过各种烷基硅烷单层处理后的高温和水浸状态。接触角和椭偏数据的几乎相同的趋势表明,硅晶种层并不能提高烷基硅烷膜在氧化硅表面上的热和水浸稳定性。此外,这项研究表明了在浸入实验中收集接触角和椭圆光度数据的重要性,因为仅依靠接触角数据可能会导致关于薄膜稳定性的错误结论。

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