Effects of annealing under various atmospheres on electrical properties of Cu(In,Ga)Se_2 films and CdS/Cu(In,Ga)Se_2 heterostructures

摘要

The effects of annealing under various atmospheres on the electrical properties of Cu(In,Ga)Se_2 (CIGS) films and CdS/CIGS heterostructures were investigated. For CIGS films without CdS, the electrical properties of CIGS degraded under vacuum and O_2 annealing, although such degradations were not observed under N_2 annealing. For the CdS/CIGS heterostructures, the electrical properties of the junctions improved after annealing under all gas ambients. Therefore, CdS films prevent the chemical reactions at the CIGS surfaces and are necessary for effectively annealing the CIGS film. We observed a distinct correlation between the degradation of the electrical properties and increase in the defect density. Finally, we discussed the origin of the defect states.