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TiAlN film preparation by Y-shape filtered-arc-deposition system

机译:Y型弧形沉积系统制备TiAlN薄膜

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摘要

A Y-shape filtered-arc-deposition system, which has two arc sources and a common plasma-transport-duct, was operated under nitrogen gas, and a titanium aluminum nitride (TiAlN) thin film was prepared with Ti and Al cathodes. Two filtered-arc plasma beams were not completely combined into one beam even at the exit of the common duct. Thus, TiAlN film with composition-uniform distribution was not obtained at the fixed substrate position. However, different composition films were easily obtained at one time. Then various-composition films of TiAlN with different arc currents were prepared and film properties were measured. The surface roughness in arithmetical mean roughness was less than 3 nm on a 1.5-nm roughness substrate. The density of TiAlN increased with the Ti-content ratio, and its hardness tended to weakly increase with Al-content ratio. The maximum hardness was 36 GPa. Ti-rich film has internal compression stress and Al-rich film has internal tensile stress.
机译:在氮气下操作具有两个电弧源和共同的等离子体传输通道的Y型过滤电弧沉积系统,并制备了具有Ti和Al阴极的氮化钛铝(TiAlN)薄膜。即使在公共导管的出口处,两个滤波电弧等离子体束也没有完全组合成一个束。因此,在固定的基板位置处没有获得具有成分均匀分布的TiAlN膜。然而,一次容易获得不同的组成膜。然后制备具有不同电弧电流的各种组成的TiAlN薄膜,并测量薄膜性能。在1.5 nm粗糙度的基板上,算术平均粗糙度下的表面粗糙度小于3 nm。 TiAlN的密度随着Ti含量比的增加而增加,并且其硬度倾向于随着Al含量比的增加而微弱地增加。最大硬度为36 GPa。富钛膜具有内部压缩应力,富铝膜具有内部拉伸应力。

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