Heteroepitaxial growth of layered semiconductors, LaZnOPn (Pn=P and As)

摘要

LaZnQPn (Pn=P and As) thin films were successfully grown on MgO (001) substrates with an epitaxial relationship of (001) LaZnOPn || (001) MgO and [ 110] LaZnOPn || [ 110] MgO. The electrical conductivity of undoped LaZnOP epitaxial film was so low, 3.1 × 10~(-6) S/cm at room temperature, that reliable Seebeck and Hall measurement results were not obtained. On the other hand, the electrical conductivities of the Cu-doped LaZnOP and undoped LaZnOAs epitaxial films were 2.7×10~(-2) and 2.0×10~(-1) S/cm at room temperature, respectively. The Seebeck coefficients of both the epitaxial films were positive, indicating p-type semiconductors. The optical bandgaps of LaZnOP and LaZnOAs were estimated to be ～ 1.7 eV and ～ 1.5 eV, respectively.