Effect of crystallographic orientations on electrical properties of sputter-deposited nickel oxide thin films

摘要

Nickel oxide thin films of various preferred orientations were deposited by radio-frequency (RF) magnetron sputtering process in different gas ratios of oxygen atmosphere at RF power 200 W on unheated and heated for (673 K) substrates. The relationships among substrate temperature, preferred orientation and electrical properties of the NiO films were investigated. The resulting films were analyzed by grazing-incidence X-ray diffraction, high-resolution transmission electron microscopy (HR-TEM), and ultrahigh resolution scanning electron microscopy (HR-SEM). The electrical properties were measured using four probe and Hall effects measurements. The results show that films deposited at room temperature with the ratio of oxygen varying from 0 to 100% develop a (111) preferred orientation. At temperature of 673 K, while the (111)-orientated film was obtained under a low ratio of oxygen (<50% O_2), a (200) preferred orientation was developed under 100% oxygen. The lowest sheet resistance 0.01 MΩ/□, resistivity 0.83 Ω-cm and higher carrier density 7.35 × 10~(18) cm~(-3) could be obtained on (111) preferred orientation samples prepared on unheated substrates in pure oxygen atmosphere. The relationship between preferred orientation and electrical properties was proposed in this paper.