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Comparative study on early stages of film growth for transparent conductive oxide films deposited by dc magnetron sputtering

机译:直流磁控溅射沉积透明导电氧化物薄膜早期生长的比较研究

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摘要

Early stages of film growth were investigated on three different kinds of representative transparent conductive oxide films including tin doped indium oxide (ITO), indium zinc oxide (IZO) and gallium doped zinc oxide (GZO) films deposited on unheated alkali free glass substrates by dc magnetron sputtering. The variations in sheet resistance, film coverage and average surface roughness showed clearly that ITO and GZO films possessed Volmer-Weber growth mode. In contrast, the evolution of islands is not clearly observed for IZO film. The nucleation density of IZO film is considered to be much higher than that of ITO and GZO films.
机译:在三种不同类型的代表性透明导电氧化物膜上研究了膜生长的早期阶段,包括通过直流电沉积在未加热的无碱玻璃基板上的锡掺杂的氧化铟(ITO),铟锌的氧化膜(IZO)和镓掺杂的氧化锌(GZO)膜。磁控溅射。薄层电阻,膜覆盖率和平均表面粗糙度的变化清楚地表明ITO和GZO膜具有Volmer-Weber生长模式。相比之下,对于IZO胶片,岛状结构的演化没有清楚地观察到。 IZO膜的成核密度被认为比ITO和GZO膜的成核密度高得多。

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