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[Ni_(80)Fe_(20)/Cu/Co/Cu] spin-valve multilayers electrodeposited on NiFe buffer layers

机译:[Ni_(80)Fe_(20)/ Cu / Co / Cu]自旋阀多层电沉积在NiFe缓冲层上

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摘要

[Ni_(80)Fe_(20)/Cu/Co/Cu]_n spin-valve multilayers were fabricated on n-Si(111) substrates by double bath electrodeposition. A well-defined periodical structure has been demonstrated by X-ray diffraction (XRD). Scanning electron microscopy morphology shows that the electrodeposited NiFe buffer layer was continuous with a nominal thickness over 25 nm. XRD and atomic force microscopy results reveal that NiFe buffer layer has a significant effect on the texture and microstructure of spin valves. Giant magnetoresistance (GMR) of spin-valve multilayers was tested by four probe technique. The maximum room temperature GMR ratio of 5.4% was achieved at the range of 1.8-2.8 kA/m with a sensitivity of up to 2.5%/(kA/m) for NiFe(25 nm)/[Cu(3.6 nm)/Co(1.2 nm)/Cu(3.6 nm)/Py(2.8 nm)]_(30). GMR performance is proved to be highly related to the thickness of each component layer. It is considered that the variation in sublayer thickness will change the coercivity difference between adjacent magnetic layers, which drives the antiparallel alignment process of magnetizations.
机译:通过双浴电沉积在n-Si(111)衬底上制备[Ni_(80)Fe_(20)/ Cu / Co / Cu] _n自旋阀多层。 X射线衍射(XRD)证明了一种明确定义的周期性结构。扫描电子显微镜形态学表明,电沉积的NiFe缓冲层是连续的,其标称厚度超过25nm。 XRD和原子力显微镜结果表明,NiFe缓冲层对自旋阀的织构和微观结构有显着影响。通过四探针技术测试了旋转阀多层的巨磁电阻(GMR)。在1.8-2.8 kA / m的范围内实现了5.4%的最大室温GMR比,对NiFe(25 nm)/ [Cu(3.6 nm)/ Co)的灵敏度高达2.5%/(kA / m) (1.2nm)/ Cu(3.6nm)/ Py(2.8nm)] _(30)。事实证明,GMR性能与每个组件层的厚度高度相关。认为子层厚度的变化将改变相邻磁性层之间的矫顽力差,这驱动了磁化的反平行取向过程。

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