Characteristics of transparent ZnO based thin film transistors with amorphous HfO_2 gate insulators and Ga doped ZnO electrodes

摘要

Coplanar type transparent thin film transistors (TFTs) have been fabricated on the glass substrates. The devices consist of intrinsic ZnO, Ga doped ZnO (GZO), and amorphous HfO_2 for the semiconductor active channel layer, electrode, and gate insulator, r