Microstructure of highly crystalline silicon carbide thin films grown by HWCVD technique

摘要

Highly crystalline silicon carbide films were synthesised by HWCVD technique. Raman spectroscopic studies show that the SiC films contain crystalline SiC and also carbon phases. Carbon is graphitic at higher chamber pressures (> 50 Pa) and resembles diamond-like carbon at low pressure (5 Pa). Cross-section TEM results show a columnar morphology of the crystallites with typical column diameters up to ～ 50 nm. Transmission electron diffraction patterns reveal SiC in its cubic and hexagonal SiC phases and the C diamond phase at low pressure. Annealing at 1000 ℃ for 1 h results in enhancement of crystallite size without nucleation of new phases.