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Improvement of stability for organic solar cells by using molybdenum trioxide buffer layer

机译:通过使用三氧化钼缓冲层提高有机太阳能电池的稳定性

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摘要

We demonstrated that the stability of organic solar cells (OSCs) under light irradiation is markedly enhanced by inserting a molybdenum trioxide (MoO_3) buffer layer between an anode layer of indium tin oxide (ITO) and ap-type layerof 5,10,15,20-tetraphenylporphyrin (H_2TPP) or N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD). The use of the MoO_3 layer also enhanced open-circuit voltages and power conversion efficiencies of the OSCs due to an increase in built-in potential. From results of stability test of hole-only α-NPD devices, we concluded that the OSC degradation occurs near the ITO/p-type layer interface and that the use of the MoO_3 layer can prevent the degradation at this interface.
机译:我们证明,通过在氧化铟锡(ITO)的阳极层和5,10,15的ap型层之间插入三氧化钼(MoO_3)缓冲层,可以显着提高光照射下有机太阳能电池(OSC)的稳定性, 20-四苯基卟啉(H_2TPP)或N,N'-二(1-萘基)-N,N'-二苯基联苯胺(α-NPD)。由于内置电势的增加,MoO_3层的使用还提高了OSC的开路电压和功率转换效率。从仅空穴的α-NPD器件的稳定性测试结果来看,我们得出的结论是OSC降解发生在ITO / p型层界面附近,而MoO_3层的使用可以防止该界面处的降解。

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