机译:栅极绝缘层对有机静电感应晶体管特性的影响
Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan;
Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan;
Faculty of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan;
Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan;
Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan;
organic static induction transistor; vertical type transistor; gate leakage current; gate insulating layers;
机译:绝缘栅双极晶体管和晶闸管静态感应的静态特性比较分析
机译:氟化酞菁铜作为有源层和聚合物介电层作为栅极绝缘层的有机场效应晶体管的性能
机译:以氟化铜酞菁为活性层和聚合物介电层为栅绝缘层的有机场效应晶体管的性能
机译:栅极线间距和有源层厚度的变化对有机静电感应晶体管性能的影响
机译:绝缘亚微米栅极III-N异质结构场效应晶体管的射频特性。
机译:具有有机和无机混合钝化层的化学组装单电子晶体管上的三输入门逻辑电路
机译:基于有机场效应晶体管的柔性热传感器,具有聚合物通道/栅极绝缘和阻光层