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The effect of an iodine source on nucleation and film properties of Ru films deposited by chemical vapor deposition

机译:碘源对化学气相沉积Ru薄膜成核和薄膜性能的影响

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The chemical vapor deposition of Ru films from (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O_2 was carried out both with and without CH_3I addition. X-ray photoelectron spectroscopy indicates that the addition of CH_3I does not significantly increase the amount of carbon in the films. Adsorbed iodine on the growing film surface results in denser, more uniform nucleation and smaller-grained, smoother films. The root-mean-square roughness of 60 nm films decreased from 8.42 to 5.62 nm for no CH_3I and CH_3I addition, respectively. Adsorbed iodine segregates through the films to the surface during growth, resulting in a continuously depressed deposition rate. The adsorbed iodine blocks oxygen dissociation sites, reducing the oxygen supply available to decompose the ligands of the Ru precursor.
机译:在添加和不添加CH_3I的情况下,都从(2,4-二甲基戊二烯基)(乙基环戊二烯基)Ru和O_2进行Ru膜的化学气相沉积。 X射线光电子能谱表明,CH_3I的添加不会显着增加膜中碳的含量。在生长的薄膜表面上吸附的碘会导致更致密,更均匀的成核和更细粒度,更光滑的薄膜。不添加CH_3I和CH_3I时,60 nm薄膜的均方根粗糙度分别从8.42 nm和5.62 nm降低。在生长过程中,吸附的碘通过薄膜偏析至表面,导致沉积速率不断降低。吸附的碘会阻断氧的离解位点,从而减少可用于分解Ru前体配体的氧供应。

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