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Determination of Young's modulus and Poisson's ratio of thin films by combining sin~2ψ X-ray diffraction and laser curvature methods

机译:结合sin〜2ψX射线衍射和激光曲率法测定薄膜的杨氏模量和泊松比

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In this study, we have proposed a nondestructive method to simultaneously determine the Young's modulus (E) and Poisson's ratio (v) of polycrystalline thin film materials. The method involved independent stress measurement by laser curvature technique and strain components determination by sin~2ψ X-ray diffraction (XRD) method, and afterward, elasticity theory was employed to calculate E and v. The proposed method was applied on two model specimens, TiN and ZrN thin films, using synchrotron X-ray and laboratory X-ray sources, respectively. The cos~2αsin~2ψ XRD method which measured the strain for diffraction planes at different location was performed on the same film, and the previously determined E and v were used to calculate the stress. The residual stresses derived from cos~2αsin~2ψ method were close to the stresses from laser curvature measurements, which validated the measured values of E and v. The depth profile of residual stress of the TiN thin film was assessed using cos~2αsin~2ψ method by appropriately adjusting the X-ray incident angle. In addition, the £ value determined from nanoindentation (NIP) may depend on the indentation depth. Therefore, one should be cautious when employing the NIP-determined E in sin~2ψ or cos~2αsin~2ψ methods to calculate the residual stress because the modulus may not always give correct stress value.
机译:在这项研究中,我们提出了一种非破坏性方法来同时确定多晶薄膜材料的杨氏模量(E)和泊松比(v)。该方法涉及通过激光曲率技术独立测量应力,并通过sin〜2ψX射线衍射(XRD)方法确定应变分量,然后,采用弹性理论计算E和v。该方法应用于两个模型样本, TiN和ZrN薄膜,分别使用同步加速器X射线和实验室X射线源。使用cos〜2αsin〜2ψXRD方法在同一薄膜上测量了不同位置的衍射平面应变,并使用预先确定的E和v来计算应力。 cos〜2αsin〜2ψ方法产生的残余应力与激光曲率测量所产生的应力接近,从而验证了E和v的测量值。使用cos〜2αsin〜2ψ方法评估了TiN薄膜的残余应力深度分布。通过适当地调整X射线的入射角的方法。另外,由纳米压痕(NIP)确定的£值可取决于压痕深度。因此,在采用sin〜2ψ或cos〜2αsin〜2ψ方法中由NIP确定的E来计算残余应力时应谨慎,因为模量不一定总能给出正确的应力值。

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