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首页> 外文期刊>Thin Solid Films >Electroless deposition of the copper sulfide coating on polyacrylonitrile with a chelating agent of triethanolamine and its EMI Shielding Effectiveness
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Electroless deposition of the copper sulfide coating on polyacrylonitrile with a chelating agent of triethanolamine and its EMI Shielding Effectiveness

机译:用三乙醇胺螯合剂化学沉积聚丙烯腈上的硫化铜涂层及其EMI屏蔽效果

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摘要

In this study, an effective deposition of CuS on PAN film was proposed by an electroless plating method with the reduction agents NaHSO_3 and Na_2S_2O_3·5H_2O and a chelating agent (triethanolamine, TEA). A variety of concentrations of TEA were added to obtain the anchoring effect and chelating effect in the electroless plating bath. The GIA-XRD and laser Raman analysis indicated that the deposited layer consisted of CuS. The mechanism of the copper sulfide (CuS) growth and the electromagnetic interference shielding effectiveness (EMI SE) of the composite were studied. It was found that the vinyl acetate remained in PAN substrate would be purged due to the swelling effect by TEA solution. Then the anchoring effect occurred due to the hydrogen bonding between the pits of PAN substrate and TEA. Consequently, the copper sulfide layer was deposited effectively by the electroless plating reaction. The swelling degree (S_d) was proposed and evaluated from the FT-IR spectra. The relationship between swelling degree of the PAN composite and TEA concentration (C) is expressed as: Sd = 0.07 +1.00 × e^(-l5.15C). On the other hand, the FESEM micrograph showed that the average thickness of copper sulfide increased from 76 nm to 247 nm when the concentration of TEA increased from 0.00 M to 0.60 M. As a result, the EMI SE of the composites increased from 10-12 dB to 25-27 dB.
机译:在这项研究中,通过使用还原剂NaHSO_3和Na_2S_2O_3·5H_2O和螯合剂(三乙醇胺,TEA)的化学镀方法,提出了在PAN膜上有效沉积CuS的方法。添加各种浓度的TEA,以在化学镀浴中获得锚固效果和螯合效果。 GIA-XRD和激光拉曼分析表明,沉积层由CuS组成。研究了复合材料硫化铜(CuS)的生长机理和电磁干扰屏蔽效果(EMI SE)。已经发现,由于TEA溶液的溶胀作用,残留在PAN基质中的乙酸乙烯酯将被清除。然后,由于PAN衬底的凹坑和TEA之间的氢键而发生锚固效应。因此,通过化学镀反应有效地沉积了硫化铜层。提出了溶胀度(S_d),并根据FT-IR光谱进行了评估。 PAN复合材料的溶胀度与TEA浓度(C)之间的关系表示为:Sd = 0.07 + 1.00×e ^(-15.15C)。另一方面,FESEM显微照片显示,当TEA浓度从0.00 M增加到0.60 M时,硫化铜的平均厚度从76 nm增加到247 nm。结果,复合材料的EMI SE从10- 12 dB至25-27 dB。

著录项

  • 来源
    《Thin Solid Films》 |2009年第17期|4984-4988|共5页
  • 作者单位

    Department of Materials Engineering, Tatung University, 40 Chung-Shan N. Rd., 3rd Sec, Taipei 104, Taiwan;

    Department of Materials Engineering, Tatung University, 40 Chung-Shan N. Rd., 3rd Sec, Taipei 104, Taiwan;

    Institute of Electro-Optical Engineering, National Kaohsiung First University of Science and Technology, 2 Jhuoyue Rd., Nanzih, Kaohsiung City 811, Taiwan;

    Department of Electro-Optical Engineering, Lan-Yan Institute of Technology, 79 Fusing Rd., Touching Town, Yilan County 261, Taiwan;

    Department of Chemistry, Tamkang University, 151 Ying-chuan Rd., Tamsui, Taipei County 25137, Taiwan;

    Department and Graduate School of Polymer Engineering, National Taiwan University of Science and Technology, 43 Sec.4, Keelung Rd., Taipei 106, Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    EMI SE; electroless plating; copper sulfide; TEA; anchoring effect;

    机译:EMI SE;化学镀硫化铜茶;锚定效应;

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