...
机译:FIB生产的单个ZnO纳米线传感器的电性能和微观结构表征
Advanced Analysis Center, Korea Institute of Science and Technology, Hawolkok-dong, Sungbuk-ku, Seoul 130-650, South Korea;
Advanced Analysis Center, Korea Institute of Science and Technology, Hawolkok-dong, Sungbuk-ku, Seoul 130-650, South Korea;
Advanced Analysis Center, Korea Institute of Science and Technology, Hawolkok-dong, Sungbuk-ku, Seoul 130-650, South Korea;
Advanced Analysis Center, Korea Institute of Science and Technology, Hawolkok-dong, Sungbuk-ku, Seoul 130-650, South Korea;
Department of Materials Science and Engineering, Korea University, Seoul 136-713, South Korea;
School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, South Korea;
School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, South Korea;
single nanowire sensor; FIB; pt deposition; electrical resistance; conductivity;
机译:用于化学传感器的ZnO单纳米线器件的电学特性
机译:ZnO / ZnTe核壳纳米线的生长,表征以及ZnO / ZnTe核壳纳米线场效应晶体管的电性能
机译:退火对水热合成制备透明电极对ZnO纳米线微结构,光学和电学性质的影响
机译:Ga注入FIB制备单根p型ZnO纳米线的电性能
机译:ZnO纳米结构的光学和电学性质的修饰和表征,以供潜在应用。
机译:ZnO纳米线密度可调生长的简便水热方法及其电学表征
机译:单个ZnO / MgO核/壳纳米线的发光和电学性质