Low-k film damage-resistant CO chemistry-based ash process for low-k/Cu interconnection in flash memory devices

摘要

In this paper, CO chemistry-based ash processes have been suggested to reduce carbon depletion and moisture absorption from plasma discharges for low-k/Cu interconnection in 40 nm-node Flash memory. We analyzed ash processes utilizing Fourier transform infrared spectroscopy (FTIR), k-value measurements, and sidewall-shrinking profile measurements based on a cross-sectional scanning electron microscope (SEM) image obtained before and after filling trench with Cu. In an effort to better understand the role of ash processes in ultra-narrow capacitors, we also evaluated the distribution of breakdown voltages as a function of voltage for trench-patterned wafers. In this paper, we successfully found that low-damage ash processes for low-k/Cu interconnection by adopting CO chemistry-based ash process.