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机译:ZnO缓冲层对射频磁控溅射在Si(100)衬底上生长的MgZnO薄膜特性的影响
School of Materials Science and Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-gu, Daegu 702-701, Republic of Korea;
School of Materials Science and Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-gu, Daegu 702-701, Republic of Korea;
School of Materials Science and Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-gu, Daegu 702-701, Republic of Korea;
School of Materials Science and Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-gu, Daegu 702-701, Republic of Korea;
School of Advanced Materials Science and Engineering Sungkyunkwan University, Suwon 440-746, Republic of Korea;
School of Advanced Materials Science and Engineering Sungkyunkwan University, Suwon 440-746, Republic of Korea;
Major of Semiconductor Physics, Korea Maritime University, Busan 606-791, Republic of Korea;
MgZnO; ZnO buffer layer; TEM; sputtering;
机译:MgO溅射功率对射频磁控溅射生长的MgZnO薄膜特性的依赖性
机译:ZnO缓冲层厚度对射频磁控溅射沉积ZnO薄膜性能的影响
机译:射频磁控溅射在Si(100)衬底上生长的高c轴织构MgO缓冲层的制备和表征,用作铁电薄膜的生长模板
机译:ZnO膜在(0001)A1_2O_3和(111)Si衬底上沉积的ZnO膜通过MOCVD用作缓冲层的ZnO薄膜生长的GaN层
机译:使用不平衡磁控溅射制造适用于薄膜晶体管的掺镓ZNO薄膜。
机译:射频直流和射频叠加直流磁控溅射沉积的透明导电掺铝ZnO多晶薄膜的载流子输运和晶体学取向特征
机译:通过RF磁控溅射在Si基板上生长的ZnO缓冲层气体气氛的影响
机译:通过电子回旋共振等离子体氧化在(100)si衬底上生长的薄(<10nm)siO(sub 2)膜的结构和界面特性。