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Effect Of Lanio_3 Electrodes And Lead Oxide Excess On Chemical Solution Deposition Derived Pb(zr_x,ti_(1-x))o_3 Films

机译:Lanio_3电极和过量氧化铅对化学溶液沉积衍生Pb(zr_x,ti_(1-x))o_3膜的影响

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The effects of LaNiO_3 (LNO) and Pt electrodes on the properties of Pb(Zr_x,Ti_(1-x))O_3 (PZT) films were compared. Both LNO and PZT were prepared by chemical solution deposition (CSD) methods. Specifically, the microstructure of LNO and its influence on the PZT properties were studied as a function of PbO excess. Conditions to minimize the Pyrochlore phase and porosity were found. Remnant polarization, coercive field and fatigue limit were improved in the PZT/LNO films relative to the PZT/Pt films. Additionally, the PZT crystallization temperature over LNO was 500 ℃, about ~50 ℃ lower than over Pt. The crystallization temperature reported here is amongst the lowest values for CSD-based PZT films.
机译:比较了LaNiO_3(LNO)和Pt电极对Pb(Zr_x,Ti_(1-x))O_3(PZT)薄膜性能的影响。 LNO和PZT均通过化学溶液沉积(CSD)方法制备。具体而言,研究了LNO的微观结构及其对PZT性能的影响,该函数是PbO过量的函数。找到了最小化烧绿石相和孔隙度的条件。相对于PZT / Pt膜,PZT / LNO膜的残余极化,矫顽场和疲劳极限得到改善。另外,LNO上的PZT结晶温度为500℃,比Pt上的结晶温度低约50℃。此处报道的结晶温度是基于CSD的PZT膜的最低值之一。

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