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Indium Tin Oxide Films Deposited On Polyethylene Naphthalate Substrates By Radio Frequency Magnetron Sputtering

机译:射频磁控溅射沉积在聚萘二甲酸乙二醇酯基板上的氧化铟锡薄膜

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Indium tin oxide (ITO) thin films were deposited on unheated polyethylene naphthalate substrates by radio-frequency (rf) magnetron sputtering from an In_2O_3 (90 wt.%) containing SnO_2 (10 wt.%) target. We report the structural, electrical and optical properties of the ITO films as a function of rf power and deposition time. Low rf power values, in the range of 100-130 W, were employed in the deposition process to avoid damage to the plastic substrates by heating caused by the plasma. The films were analyzed by X-ray diffraction and optical transmission measurements. A Hall measurement system was used to measure the carrier concentration and electrical resistivity of the films by the Van der Pauw method. The X-ray diffraction measurements analysis showed that the ITO films are polycrystalline with the bixbite cubic crystalline phase. It is observed a change in the preferential crystalline orientation of the films from the (222) to the (400) crystalline orientation with increasing rf power or deposition time in the sputtering process. The optical transmission of the films was around 80% with electrical resistivity and sheet resistance down to 4.9 × 10~(-4) Ωcm and 14 Ω/sq, respectively.
机译:通过射频(rf)磁控管溅射,从包含SnO_2(10 wt%)的In_2O_3(90 wt%)靶材上,在未加热的聚萘二甲酸乙二醇酯基板上沉积氧化铟锡(ITO)薄膜。我们报告了ITO薄膜的结构,电学和光学特性,它是射频功率和沉积时间的函数。在沉积过程中采用100-130 W范围内的低rf功率值,以避免由于等离子体引起的加热而损坏塑料基板。通过X射线衍射和光学透射率测量来分析膜。使用霍尔测量系统通过范德堡方法测量薄膜的载流子浓度和电阻率。 X射线衍射测量分析表明ITO膜是具有Bixbite立方晶相的多晶。观察到在溅射过程中,随着(rf)功率或沉积时间的增加,膜的优先晶体取向从(222)到(400)晶体取向的变化。薄膜的透光率约为80%,电阻率和薄层电阻分别降至4.9×10〜(-4)Ωcm和14Ω/ sq。

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