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首页> 外文期刊>Thin Solid Films >Structural And Electrochromic Properties Of Molybdenum Doped Vanadium Pentoxide Thin Films By Sol-gel And Hydrothermal Synthesis
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Structural And Electrochromic Properties Of Molybdenum Doped Vanadium Pentoxide Thin Films By Sol-gel And Hydrothermal Synthesis

机译:溶胶-凝胶法和水热法合成钼掺杂五氧化二钒薄膜的结构和电致变色性能

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Molybdenum-doped vanadium pentoxide (Mo-doped V_2O_5) thin films with doping levels of 3-10 mol% were prepared by dip-coating technique from a stable Mo-doped V_2O_5 sol synthesized by sol-gel and hydrothermal reaction. The Mo-doped V_2O_5 films had a layered V_2O_5 matrix structure along c-axis orientation with Mo~(6+) as substitutes. Values of the inserted and extracted charge density of 21,4 and 21.3 mC·cm~(-2) and the transmittance variation (ΔT at 540 nm) between anodic (+1.0 V) and cathodic (-1.0 V) colored states of 41% were observed for the films with 5 mol% Mo~(6+) doping. Above this dopant concentration, the charge capacity and AT decreased. The enhancement of the electrochemical and electrochromic properties of the films is related to changes in the electronic properties of V_2O_5 films due to the creation of energy levels in the band gap of V_2O_5 by the Mo doping, accompanied by the reduction of the forbidden-band width and the increase of the conductivity.
机译:采用溶胶-凝胶法和水热反应合成的稳定的Mo掺杂V_2O_5溶胶,通过浸涂技术制备了掺杂水平为3-10mol%的Mo掺杂V_2O_5薄膜。 Mo掺杂的V_2O_5薄膜具有沿c轴取向的分层的V_2O_5基体结构,并以Mo〜(6+)为替代。插入和提取的电荷密度分别为21.4和21.3 mC·cm〜(-2),阳极(+1.0 V)和阴极(-1.0 V)有色状态之间的透射率变化(540 nm处的ΔT)为41对于具有5mol%的Mo〜(6+)掺杂的膜,观察到50%的%。高于该掺杂剂浓度,电荷容量和AT降低。膜的电化学和电致变色性质的增强与V_2O_5膜的电子性质的变化有关,这归因于Mo掺杂在V_2O_5的带隙中产生能级,同时禁带宽度减小并增加电导率。

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