High-rate reactive deposition of transparent SiO_2 films containing low amount of Zr from molten magnetron target

摘要

The paper reports on a reactive deposition of transparent SiO_2 films with a low amount (≤3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron. It is shown that the deposition rate a_D of the transparent oxide film strongly increases at the critical target power density (W_t)_(cr) when the solid target starts to melt and the magnetron operates with a molten target. In this case, the evaporation of target material plays a dominant role in the reactive deposition of thin films. This process is called the ionized magnetron evaporation. Oxide films reactively deposited from the molten target are well transparent and highly elastic. The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min.