Piezoresistive polysilicon film obtained by low-temperature aluminum-induced crystallization

摘要

A low-temperature deposition process employing aluminum-induced crystallization has been developed for fabrication of piezoresistive polycrystalline silicon (polysilicon) films on low cost and flexible polyimide substrates for force and pressure sensing applications. To test the piezoresistive properties of the polysilicon films, prototype pressure sensors were fabricated on surface-micromachined silicon nitride (Si_3N_4) diaphragms, in a half-Wheatstone bridge configuration. Characterization of the pressure sensor was performed using atomic force microscope in contact mode with a specially modified probe-tip. Low pressure values ranging from 5 kPa to 45 kPa were achieved by this method. The resistance change was found to be -0.1% to 0.5% and 0.07% to 0.3% for polysilicon films obtained at 500 ℃ and 400 "C, respectively, for the applied pressure range.