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机译:N_2退火条件对Pt / HfO_2 / SiC肖特基二极管氢传感器传感特性的影响
Department of Electrical and Electronic Engineering, The University of Hong Kong Pokfulam Road, Hong Kong;
Department of Electrical and Electronic Engineering, The University of Hong Kong Pokfulam Road, Hong Kong;
Department of Electrical and Electronic Engineering, The University of Hong Kong Pokfulam Road, Hong Kong;
hydrogen sensors; silicon carbide; schottky diode; HfO_2;
机译:以Hfo_2为栅极绝缘体改善Mis肖特基二极管氢传感器的传感特性
机译:新型$ hbox {Pt} hbox {/ HfTiO} _ {2} hbox {/ SiC} $肖特基二极管氢传感器的改进的传感特性
机译:阳极氧化TiO_2薄膜传感器的氢敏特性制备和预处理条件的影响
机译:退火温度对Pt / HFO
机译:沉积条件对氢化非晶硅和硅锗合金(太阳能电池,薄膜晶体管)的结构,光电和器件性能的影响。
机译:Pd / SnO2纳米材料形成条件对氢传感器性能的影响
机译:退火温度对pt / HfO2 / siC肖特基二极管氢传感器传感特性的影响