...
机译:通过超净低压CVD外延生长在Si(100)上的Si_(1-x)Ge_x膜中氮的重原子层掺杂
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;
rnLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;
rnIHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany Technische Universitaet Berlin, HFT4, Einsteinufer 25, 10587, Berlin, Germany;
rnLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;
chemical vapor deposition (CVD); atomic-layer doping; SiGe; N; thermal stability; X-ray photoelectron spectroscopy (XPS);
机译:在超净低压CVD中,PH_3和Si_2H_6在应变的Si_(1-x)Ge_x / Si(1 0 0)上交替发生表面反应,从而使P原子层掺杂的Si膜外延生长
机译:超净低压Cvd系统在自限B吸附Si_(1-x)ge_x(100)上进行Si外延生长
机译:超净低压CVD法在B吸附的Si(100)上外延生长Si时重B原子层的掺杂特性
机译:使用超净LPCVD低温原位重掺杂b掺杂的Si_(1-x)Ge_x薄膜的低温外延生长
机译:通过MOCVD生长的高导电性和透明氧化镉薄膜:外延生长和掺杂效应
机译:多层氮掺杂外延生长法制备的CVD单晶金刚石的界面和力学性能
机译:通过分子束外延对在(100)Si上生长的Si_(1-x)Ge_x合金进行(2X8)表面重构的观察
机译:LpE和mOCVD技术生长Gaas和al(x)Ga(1-x)as外延薄膜生长参数的研究