首页> 外文期刊>Thin Solid Films >Photoluminescence characteristics of Li-doped CaTiO_3: Pr~(3+) thin films grown on Si (100) substrate by PLD
【24h】

Photoluminescence characteristics of Li-doped CaTiO_3: Pr~(3+) thin films grown on Si (100) substrate by PLD

机译:通过PLD在Si(100)衬底上生长的Li掺杂CaTiO_3:Pr〜(3+)薄膜的光致发光特性

获取原文
获取原文并翻译 | 示例
           

摘要

The effects of Li-doped CaTiO_3: Pr~(3+) thin films have been investigated by varying the lithium ion concentrations from 0 to 5 wt.%. The films have been deposited on Si (100) substrate using a pulsed laser deposition technique. Structural properties of these films have been studied by the measurement of their XRD, SEM, and AFM. The variation of Li~+ concentration influences the crystallinity and surface morphology of the CaTiO_3: Pr~(3+) thin films. As Li~+ content increases from 0 to 1 wt%, the crystallinity and intensity of emission increases. The dominant emission is from ~1D_2→~3H_4 transition at 613 nm. The ~1D_2 emission quenching has also been observed in highly doped sample and is related to the cross-relaxation process between Pr~(3+) ions.
机译:通过将锂离子浓度从0到5 wt。%进行了研究,研究了掺Li的CaTiO_3:Pr〜(3+)薄膜的效果。使用脉冲激光沉积技术将薄膜沉积在Si(100)衬底上。这些膜的结构特性已通过测量其XRD,SEM和AFM进行了研究。 Li〜+浓度的变化会影响CaTiO_3:Pr〜(3+)薄膜的结晶度和表面形貌。当Li +含量从0增加到1wt%时,结晶度和发射强度增加。主导发射来自于613 nm处的〜1D_2→〜3H_4跃迁。在高掺杂样品中也观察到〜1D_2发射猝灭,它与Pr〜(3+)离子之间的交叉弛豫过程有关。

著录项

  • 来源
    《Thin Solid Films》 |2010年第22期|p.6219-6222|共4页
  • 作者单位

    Department of Physics, Pukyong National University, Busan 608-737, Republic of Korea;

    rnDepartment of Physics, Pukyong National University, Busan 608-737, Republic of Korea;

    rnDepartment of Physics, Pukyong National University, Busan 608-737, Republic of Korea;

    rnDepartment of Physics, Pukyong National University, Busan 608-737, Republic of Korea;

    rnDepartment of Physics, Pukyong National University, Busan 608-737, Republic of Korea;

    rnDepartment of Physics, Changwon National University, Changwon 641-773, Republic of Korea;

    rnDepartment of Electronic Materials Engineering, Silla University, Busan, 617-736, Republic of Korea;

    rnDepartment of Electronic Materials Engineering, Silla University, Busan, 617-736, Republic of Korea;

    rnSchool of Materials Science and Engineering, Pusan National University, Busan, 609-735, Republic of Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CaTiO_3:Pr~(3+); lithium doping; thin film; phosphor; PLD;

    机译:CaTiO_3:Pr〜(3+);锂掺杂薄膜;磷;可编程逻辑器件;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号