Multiferroic Bi_(0.7)Dy_(0.3)FeO_3 thin films directly integrated on Si for integrated circuit compatible devices

摘要

Magnetoelectric multiferroic Bi_(0.7)Dy_(0.3)FeO_3(BDFO) thin films deposited on p-type Si (100) substrate using pulsed laser deposition technique demonstrated a saturated ferroelectric and ferromagnetic hysteresis loop at room temperature. More interestingly, the observed change in electric polarization with applied magnetic field in these films indicated the presence of room temperature magnetoelectric coupling behavior. Using high-frequency capacitance-voltage measurements, the fixed oxide charge density, interface trap density and dielectric constant were estimated on Au/BDFO/Si capacitors. These results suggest the integrated circuit compatible application potential of BDFO films in the field of micro-electro-mechanical systems and nonvolatile memories.