机译:使用铜酞菁的p和n沟道有机薄膜晶体管的保质期测试
Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UPR CNRS 3118, Aix Marseille Universite Campus Luminy, Case 913, 13288 Marseille Cedex 09, France;
Department of Materials Science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan;
Department of Materials Science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan;
Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UPR CNRS 3118, Aix Marseille Universite Campus Luminy, Case 913, 13288 Marseille Cedex 09, France;
Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UPR CNRS 3118, Aix Marseille Universite Campus Luminy, Case 913, 13288 Marseille Cedex 09, France;
organic semiconductor; copper phthalocyanine; fluorinated copper phthalocyanine; thin films; morphology; thin film transistor; stability; X-ray diffraction; atomic force miscoscopy; charge carrier mobility;
机译:生长在光滑绝缘子表面上的取代酞菁薄膜的有机n沟道,用于有机场效应晶体管应用
机译:使用有机Pn结改善氟化酞菁铜薄膜晶体管的性能:酞菁铜铜膜厚度的影响
机译:用于p和n沟道底部接触有机薄膜晶体管的固溶还原氧化石墨烯电极的制备和评估
机译:利用氧等离子体处理的ITO源电极和漏电极的N沟道氟化铜酞菁薄膜晶体管
机译:环烷基封端的膦酸的自组装单层:N沟道有机薄膜晶体管接口工程的结构和应用
机译:p和n通道TiOx薄膜晶体管的可调性
机译:利用氧等离子体处理ITO源极和漏极的N沟道氟化铜酞菁薄膜晶体管