Oxygen ion drifted bipolar resistive switching behaviors in TiO_2-Al electrode interfaces

摘要

The rutile TiO_2 thin film involving two different top electrodes (Pt and Al) clearly shows the unipolar and bipolar resistive switching transitions which are dependent on the degree of redox properties at TiO_2 layer-electrode interfaces. Detailed current level analysis coupled with Auger electron spectroscopy measurements of the Pt/TiO_2/Pt and Al/TiO_2/Pt structures in the on/off switching states revealed the implication of oxygen ion migration induced chemical reaction at the Al-TiO_2 interfaces. Therefore, it is expected that the bipolar transition nature of resistive switching with an Al electrode is the resulting formation of a thin AlO_x layer due to redox reaction at Al-TiO_2 layer interfaces.