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机译:金属-绝缘子-金属电容器中基于f的高k介电层的组织和化学分析
Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel Institute of Materials Science, National Center of Scientific Research 'Demokritos', Aghia Paraskevi 15310, Athens, Greece;
Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel;
Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel;
Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel;
high-k; MIM capacitors; HRTEM; HAADF; EELS; EDS; spectrum imaging;
机译:金属-绝缘体-金属电容器应用中各种金属有机前体的高k介电Ce-Al-O层的金属有机化学气相沉积
机译:动态随机存取存储器金属-绝缘体-金属电容器中使用的非晶ZrAl_xO_y高k电介质的时间依赖性击穿
机译:先进的基于高k电介质非晶LaGdO_3的高密度金属-绝缘体-金属电容器,亚纳米电容等效厚度
机译:密集等离子体聚焦法研究镧掺入的HfO_2纳米级高K电介质在金属-绝缘体-金属电容器中的应用
机译:高k栅极电介质的反应:在ha,锆,钇和镧基电介质以及二氧化ha原子层沉积的原位红外结果方面的研究。
机译:具有气溶胶沉积的高K介电层的叉指电容器在电容式超感测应用中具有最高的电容值
机译:单一SiO2层掺入对金属绝缘金属电容器电气性能的影响,用Al2O3-HFO2-AL2O3电介质