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机译:透明导电AZO和GZO薄膜在高温下的电阻率特性比较研究
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
rnOptoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
rnOptoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
rnOptoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
rnOptoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
rnOptoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
AZO; GZO; thin film; magnetron sputtering deposition; pulsed laser deposition; vacuum arc plasma evaporation; heat stability tests; transparent electrode;
机译:透明导电GZO,Pt / GZO和GZO / Pt / GZO薄膜
机译:PLD法制备的IZO / AZO和AZO / IZO双层透明导电薄膜的特性
机译:比较热耐久性和退火温度对氢掺杂ZnO,偶氮和GZO薄膜特性的影响
机译:退火温度对Ti:GZO透明导电氧化氧化物的电气性能的影响
机译:金属嵌入式透明导电氧化物薄膜的电阻率和透光率模拟
机译:ZnOAZO和GZO透明半导体薄膜的紫外光响应特性的比较研究
机译:ZnO,aZO和GZO透明半导体薄膜的紫外光衍射光响应特性的比较研究