机译:平面化氧化铝基板上的Ba_xSr_(1-x)Ti_(1.02)O_3金属-绝缘体-金属电容器
MESA+ Institute for Nanotechnology, Semiconductor Components, University of Twente, 7500 AE Enschede, The Netherlands;
NXP Semiconductors, Corporate I &TI Research, 5656 AE Eindhoven, The Netherlands;
Philips Research Laboratories, 565S AE Eindhoven, The Netherlands;
Philips Research Laboratories, 565S AE Eindhoven, The Netherlands;
Philips Research Laboratories, 565S AE Eindhoven, The Netherlands;
MESA+ Institute for Nanotechnology, Semiconductor Components, University of Twente, 7500 AE Enschede, The Netherlands;
aluminium oxide; ceramics; glass; ferroelectric properties; electron microscopy; x-ray diffraction;
机译:高度(100)的(Pb_(1-x)La_x)Ti_(1-x / 4)O_3 / Pb(Zr_(0.20)Ti_(0.80))O_3 /(Pb_(1-x)La_x)Ti_(1 -x / 4)O_3射频磁控溅射多层薄膜
机译:(Ba_xSr_(1-x))_(1 + y)Ti_(1-y)O_(3-δ)和(Ba_xSr_(1-x))_(1 + y)Ti_(的高通量合成与表征1-y)O_(3-z)N_z钙钛矿薄膜
机译:(Ba_(1-x)Bi_(0.33x)Sr_(0.67x))(Ti_(1-x)Bi_(0.67x)V_(0.33x))O_3和(Ba_(1-x)Bi_(0.5x)
机译:用于移相器的Ba_xSr_(1-x)TiO_3薄膜的Ba(Mg_(1/3)Ta_(2/3))O_3衬底