Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films

摘要

Tungsten-doped tin oxide (SnO_2:W) transparent conductive films were prepared on quartz substrates by pulsed plasma deposition method with a post-annealing. The structure, chemical states, electrical and optical properties of the films have been investigated with tungsten-doping content and annealing temperature. The lowest resistivity of 6.67 × 10~(-4) Ω cm was obtained, with carrier mobility of 65 cm2~ V~(-1) s~(-1) and carrier concentration of 1.44 × 10~(20) cm~(-3) in 3 wt.% tungsten-doping films annealed at 800 ℃ in air. The average optical transmittance achieves 86% in the visible region, and approximately 85% in near-infrared region, with the optical band gap ranging from 4.05 eV to 4.22 eV.