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On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering

机译:长程磁控溅射制备铟锡氧化物薄膜的结构和表面化学组成

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摘要

Structures and surface chemical composition of indium tin oxide (ITO) thin films prepared by long-throw radio-frequency magnetron sputtering technique have been investigated. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. X-ray diffraction results showed that an increase in substrate temperature resulted in ITO structure evolution from amorphous to polycrystalline. Field-emission scanning electron microscopy micrographs suggested that the ITO films were free of bombardment of energetic particles since the microstructures of the films exhibited a smaller grain size and no sub-grain boundary could be observed. The surface composition of the ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1s XPS spectra. However, the peak of the oxygen atoms in amorphous ITO phase could only be found in samples prepared at low substrate temperatures. Its relative peak area decreased drastically when substrate temperatures were larger than 200 ℃. In addition, a composition analysis from the XPS results revealed that the films deposited at low substrate temperatures contained high concentration of oxygen at the film surfaces. The oxygen-rich surfaces can be attributed to hydrolysis reactions of indium oxides, especially when large amount of the amorphous ITO were developed near the film surfaces.
机译:研究了长程射频磁控溅射技术制备的铟锡氧化物(ITO)薄膜的结构和表面化学组成。 ITO膜在纯氩溅射环境中使用20 cm的靶到基底距离沉积在玻璃基底上。 X射线衍射结果表明,衬底温度的升高导致ITO结构从无定形演变为多晶。场发射扫描电子显微镜显微照片表明,ITO薄膜没有轰击高能粒子,因为该薄膜的微观结构显示出较小的晶粒尺寸,并且未观察到亚晶界。 ITO膜的表面组成通过X射线光电子能谱法(XPS)表征。从O 1s XPS光谱中观察到非晶和晶体ITO结构中的氧原子。但是,仅在低基材温度下制备的样品中才能发现非晶ITO相中氧原子的峰。当底物温度大于200℃时,其相对峰面积急剧下降。另外,根据XPS结果的组成分析表明,在低基材温度下沉积的薄膜在薄膜表面含有高浓度的氧气。富氧表面可归因于氧化铟的水解反应,尤其是当在薄膜表面附近形成大量无定形ITO时。

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  • 来源
    《Thin Solid Films》 |2010年第8期|2290-2294|共5页
  • 作者单位

    Department of Electronic Engineering, Chienkuo Technology University, Changhua City, Taiwan, ROC;

    rnMaterial and Chemical Research Labs, of Industrial Technology Research Institute, Hsinchu, 310, Taiwan, ROC;

    rnMaterial and Chemical Research Labs, of Industrial Technology Research Institute, Hsinchu, 310, Taiwan, ROC;

    rnInstitute of Electro-optical Engineering and Semiconductor Technology Research and Development Center, National Sun Yat-sen University, Kaohsiung, Taiwan, ROC;

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  • 正文语种 eng
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  • 关键词

    ITO; rf magnetron sputtering; x-ray diffraction; x-ray photoelectron spectroscopy;

    机译:ITO;射频磁控溅射;X射线衍射;X射线光电子能谱;

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