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机译:使用顺序流化学气相沉积工艺改善基于TiCl_4的TiN薄膜的性能和电性能
Macronix International Co., LTD., No. 16, Li-Hsin Road, Science Park, Hsin-chu, Taiwan, ROC;
rnMacronix International Co., LTD., No. 16, Li-Hsin Road, Science Park, Hsin-chu, Taiwan, ROC;
rnMacronix International Co., LTD., No. 16, Li-Hsin Road, Science Park, Hsin-chu, Taiwan, ROC;
rnMacronix International Co., LTD., No. 16, Li-Hsin Road, Science Park, Hsin-chu, Taiwan, ROC;
rnMacronix International Co., LTD., No. 16, Li-Hsin Road, Science Park, Hsin-chu, Taiwan, ROC;
rnMacronix International Co., LTD., No. 16, Li-Hsin Road, Science Park, Hsin-chu, Taiwan, ROC;
titanium nitride; chemical vapor deposition; metal organic chemical vapor deposition; titanium chloride; secondary ion mass spectroscopy; transmission electron microscopy;
机译:O_2,N_2流量和沉积时间对通过大气压化学气相沉积(APCVD)沉积的SnO_2薄膜的结构,电学和光学性质的依赖性
机译:建立具有先进和可重复电性能的化学气相沉积的石墨烯薄膜的可靠转移过程
机译:建立可靠的转移工艺来制造化学气相沉积生长的石墨烯薄膜,该薄膜具有先进且可重复的电性能
机译:流动调制化学气相沉积(FMCVD)制备的锡膜的阻隔性能
机译:掺杂氧化锌薄膜的大气压化学气相沉积及其电学和光学性质。
机译:吡啶化学气相沉积制得的氮掺杂石墨烯薄膜:工艺参数对电学和光学性质的影响
机译:吡啶化学气相沉积制得的氮掺杂石墨烯薄膜:工艺参数对电学和光学性质的影响
机译:10-50 nm TEOs(四乙氧基硅烷)LpCVD(低压化学气相沉积)薄膜的电学特性