Study on the dynamic resistance switching properties of NiO thin films

摘要

The resistive switching properties of NiO-based memory cells were investigated utilizing test structures with a storage contact size of 150 nm in diameter. Two well defined stable resistance states with high OFF/ON ratios were achieved by unipolar operation. Detailed electrical characterizations with respect to nonvolatile memory applications reveal fast (<300 ns) and reliable switching performance at low operating voltages (<2.5V). Promising results of endurance data (> 1000cycles) and retention tests up to 110 ℃ show excellent stability and indicate the competitive potential with respect to established nonvolatile memory devices.