Influence of N_2 flow rate on the mechanical properties of SiN_x films deposited by microwave electron cyclotron resonance magnetron sputtering

摘要

Hydrogen-free amorphous silicon nitride (SiN_x) films were deposited at room temperature by microwave electron cyclotron resonance plasma-enhanced unbalance magnetron sputtering. Varying the N_2 flow rate, SiN_x films with different properties were obtained. Characterization by Fourier-transform infrared spectrometry revealed the presence of Si-N and Si-0 bonds in the films. Growth rates from 1.0 to 4.8 nm/min were determined by surface profiler. Optical emission spectroscopy showed the N element in plasma mainly existed as N~+ species and N_2~+ species with 2 and 20 sccm N_2 flow rate, respectively. With these results, the chemical composition and the mechanical properties of SiN_x films strongly depended on the state of N element in plasma, which in turn was controlled by N_2 flow rate. Finally, the film deposited with 2 sccm N_2 flow rate showed no visible marks after immersed in etchant [6.7% Ce(NH_4)_2(NO_3)_6 and 93.3% H_2O by weight] for 22 h and wear test for 20 min, respectively.