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机译:脉冲激光沉积制备Co-Ga共掺杂ZnO薄膜的结构和磁性
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China;
rnState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China;
rnState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China;
rnState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China;
rnState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China;
ZnO; Co-doping; diluted magnetic semiconductors; pulsed laser deposition;
机译:沉积温度对脉冲激光沉积制备ZnO薄膜的结构和形貌特性的影响
机译:氧气压力对脉冲激光沉积生长的Al和Sb共掺杂P型ZnO薄膜结构和电性能的影响
机译:脉冲激光沉积制备(Al或Ga)和P共掺杂ZnO薄膜的结构和电学性质
机译:脉冲激光沉积在硅衬底上生长的ZnO薄膜的光学和微结构性质
机译:原位热退火工艺对脉冲激光沉积制造CDS Cdte薄膜太阳能电池结构,光学和电性能的影响
机译:通过脉冲激光沉积制备具有可调光学性能的超均匀Pb0.865La0.09(Zr0.65Ti0.35)O3薄膜
机译:脉冲激光沉积共掺杂ZnO薄膜的结构,光学和磁性