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Structural and magnetic properties of Co-Ga co-doped ZnO thin films fabricated by pulsed laser deposition

机译:脉冲激光沉积制备Co-Ga共掺杂ZnO薄膜的结构和磁性

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摘要

Co-Ga co-doped ZnO films were fabricated by pulsed laser deposition on quartz substrates. The obtained films exhibited a wurtzite structure with c-axes growth preference. Optical measurements showed the presence of the cobalt ions in a tetrahedral crystal field, which proved that the Co ion substitution in the ZnO lattice, acting as magnetic cation. Hall measurements indicated that the films were n-type conductive with the electron concentrations of ~ 10~(20)/cm~3. This value was much higher than that of the Co-doped films, suggesting the effective incorporation of Ga in the films. Room temperature ferromagnetism was observed for the Ga-Co co-doped thin films.
机译:通过在石英衬底上脉冲激光沉积制备Co-Ga共掺杂ZnO薄膜。所获得的膜表现出具有c轴生长偏好的纤锌矿结构。光学测量表明在四面体晶场中存在钴离子,这证明了ZnO晶格中的Co离子取代充当了磁性阳离子。霍尔测量表明该薄膜为n型导电性,电子浓度为〜10〜(20)/ cm〜3。该值比Co掺杂膜的值高得多,表明Ga有效地掺入了膜中。观察到Ga-Co共掺杂薄膜的室温铁磁性。

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  • 来源
    《Thin Solid Films》 |2010年第8期|1879-1882|共4页
  • 作者单位

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China;

    rnState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China;

    rnState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China;

    rnState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China;

    rnState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO; Co-doping; diluted magnetic semiconductors; pulsed laser deposition;

    机译:氧化锌;共掺杂;稀释的磁性半导体;脉冲激光沉积;

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