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机译:通过干氧化Si_(0.7)Ge_(0.3)膜形成的薄Ge堆积层处的应变行为
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seodaemun, Seoul 120-749, Korea;
rnDepartment of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seodaemun, Seoul 120-749, Korea;
rnDepartment of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seodaemun, Seoul 120-749, Korea;
rnDepartment of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seodaemun, Seoul 120-749, Korea;
rnInstitute of Physics and Applied Physics, Yonsei University, 134 Shinchon, Seodaemun, Seoul 120-749, Korea;
rnDepartment of Physics, North Carolina State University, Raleigh, NC 27695-8202 USA;
rnJusung Engineering Co., Ltd., 49, Neungpyeong-ri, Opo-eup, Gwangju-Si, Kyunggi-do, Korea, 464-892, Korea;
Si_(1-x)Ge_x; oxidation; Ge pile-up layer; relaxation; medium energy ion scattering; strain;
机译:在应变Si_(0.7)Ge_(0.3)层上生长的HfO_2膜中掺入氮的不稳定性
机译:使用Si_(0.7)Ge_(0.3)层在晶格匹配应变Si(001)表面上高度[100]取向的β-FeSi_2薄膜的分子束外延。
机译:通过具有薄层插入Si层的纳米球体光刻技术增强了(001)Si_(0.7)Ge_(0.3)上低电阻率NiSi纳米接触的周期性阵列的形成
机译:外延Si_(0.7)Ge_(0.3)薄膜的干氧化行为
机译:压电瘤应用Pb(Zr0.3Ti0.7)O3薄膜对缩放效应对缩放效应的影响
机译:通过在还原性气氛下引入18O示踪剂绘制SrTi0.7Fe0.3O3-δ和Ce0.8Gd0.2O1.9混合导电薄膜的电化学驱动气体交换图
机译:在缺乏平行传导的情况下,$ Ge_ {0.7} Si_ {0.3} / Ge / Ge_ {0.7} Si_ {0.3} $调制掺杂异质结构的高室温空穴迁移率