Study of electrical properties of CIGS thin films prepared by multistage processes

摘要

In this work, the dispersion mechanisms affecting the electric transport in Culn_(1-x)Ga_xSe_2 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the Culn_(1-x)Ga_xSe_2 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.