机译:通过热退火嵌入氮化硅中的硅量子点的光学性质
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates;
rnDepartment of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates;
rnNanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Cwangju, 500-712, Republic of Korea;
silicon; quantum dots; hydrogen passivation; thermal annnealing; photoluminescence;
机译:沉积温度和沉积后退火对氯化氮化硅薄膜硅量子点光致发光的综合研究
机译:沉积温度和沉积后退火对氯化氮化硅薄膜硅量子点光致发光的综合研究
机译:沉积后退火温度对通过热线化学气相沉积制备的氮化硅电介质多层膜中嵌入的硅量子点的影响
机译:富硅氮化硅热退火制备的氮化硅嵌入硅纳米晶体的光致发光
机译:硅量子点/聚合物纳米复合材料的温度依赖性光学性质。
机译:热退火对非晶硅氮化硅膜嵌入浓度的致密Si纳米蛋白光致发光的影响
机译:氮化硅中嵌入的硅纳米晶体的结构和光学性质的相关性:用于光电应用的量子限制的实验研究